BC857,215 datasheet

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Маркировка

BC857,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BC857,215 Collector Current (dc) (max): 100mA Collector- Emitter Voltage Vceo Max: 45 V Collector-base Voltage: 50V Collector-emitter Voltage: 45V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V Dc Current Gain (min): 125 Emitter- Base Voltage Vebo: 5 V Emitter-base Voltage: 5V Frequency (max): 100MHz Frequency - Transition: 100MHz ID_COMPONENTS: 1949457 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.2 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 125 at 2 mA at 5 V DC Current Gain hFE Max: 125 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BC857 T/R Other Names: 933589740215::BC857 T/R::BC857 T/R
Количество страниц

10 шт.
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91,59 KB